copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev. 3.0 features high ruggedness r ds( on ) (max 2.5 ? )@v gs =10v gate charge ( typ 11nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. this power mosfet is usually used at high efficient dc to dc converter block and switch mode power supply. n - channel i - pak/d - pak/to - 220f mosfet absolute maximum ratings symbol parameter value unit to - 251 to - 252 to - 220f v dss drain to source voltage 600 v i d continuous drain current (@t c =25 o c) 4* a continuous drain current (@t c =100 o c) 2.5* a i dm drain current pulsed (note 1) 16 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 271 mj e ar repetitive avalanche energy (note 1) 50 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 140 144.5 19.1 w derating factor above 25 o c 1.1 1.2 0.152 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit to - 251 to - 252 to - 220 f r thjc thermal resistance, junction to case 0.91 0.87 6.56 o c/w r thcs thermal resistance, case to sink o c/w r thja thermal resistance, junction to ambient 76.1 78.9 48.32 o c /w 1/7 *. drain current is limited by junction temperature. bv dss : 600v i d : 4a r ds(on) : 2.5 ? sw4N60B samwin 1 2 3 order codes item sales type marking package packaging 1 sw i 4n60 sw4N60B to - 251 tube 2 sw d 4n60 sw4N60B to - 252 reel 3 sw f 4n60 sw4N60B to - 220f tube to - 251 1 2 3 to - 252 1 2 3 1. gate 2. drain 3. source to - 220f 1 3 2 free datasheet http://
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev. 3.0 electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 600 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 1.63 v/ o c i dss drain to source leakage current v ds =600v, v gs =0v 1 ua v ds =480v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v 100 na v gs = - 30v, v ds =0v - 100 na gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 4 v r ds(on) drain to source on state resistance v gs =10v, i d = 2a 2 2.5 ? g fs forward transconductance v ds = 30 v, i d = 2 a 2 s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 463 pf c oss output capacitance 63 c rss reverse transfer capacitance 19 t d(on) turn on delay time v ds =300v, i d =4a, r g =25? (note 4,5) 10 20 ns tr rising time 21 40 t d(off) turn off delay time 17 40 t f fall time 21 40 q g total gate charge v ds =480v, v gs =10v, i d =4a (note 4,5) 11 25 nc q gs gate - source charge 3 q gd gate - drain charge 4 source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 4 a i sm pulsed source current 16 a v sd diode forward voltage drop. i s =4a, v gs =0v 1.5 v t rr reverse recovery time i s =4a, v gs =0v, di f / dt =100a/us 260 ns q rr reverse recovery charge 1.8 uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 33.9mh, i as = 4a, v dd = 50v, r g =25?, starting t j = 25 o c 3. i sd 4a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2%. 5. essentially independent of operating temperature. sw4N60B samwin 2/7 free datasheet http://
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev. 3.0 fig. 1. on - state characteristics 3/7 sw4N60B samwin fig. 3. gate charge characteristics fig. 4. on state current vs. diode forward voltage fig. 2. on - resistance variation vs. drain current and gate voltage fig 5. breakdown voltage variation vs. junction temperature fig. 6. on resistance variation vs. junction temperature free datasheet http://
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev. 3.0 4/7 sw4N60B samwin fig. 7. maximum safe operating area to - 251 fig. 8. maximum safe operating area to - 252 fig. 10. transient thermal response curve to - 251 fig. 9. maximum safe operating area to - 220f fig. 11. transient thermal response curve to - 252 fig. 12. transient thermal response curve to - 220f free datasheet http://
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev. 3.0 v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 13. gate charge test circuit & waveform fig. 14 . switching time test circuit & waveform fig. 15 . unclamped inductive switching test circuit & waveform 6/7 sw4N60B samwin v ds same type as dut dut v gs 1ma q g q gs q gd v gs charge nc 10v free datasheet http://
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev. 3.0 fig. 16 . peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd sw4N60B samwin 7/7 free datasheet http://
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev. 3.0 sw4N60B samwin revision history revision no. changed characteristics responsible date issuer ????? ? ? 25 ? mf6 029 - 88253717 029 - 88251977 ????? ??? a 2005 0755 - 83981818 0755 - 83476838 www.semipower.com.cn 8/8 free datasheet http://
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